High Speed Voltage Follower using DTMOS Transistor
| Author(s) | : | Nishtha K. Patel, Nilesh D. Patel |
| Institution | : | PG Student Electronics & Communication, LCIT-Bhandu Gujarat Technological University, Gujarat, India |
| Published In | : | Vol. 2, Issue 4 — April 2015 |
| Page No. | : | 620-625 |
| Domain | : | Engineering |
| Type | : | Research Paper |
| ISSN (Online) | : | 2348-4470 |
| ISSN (Print) | : | 2348-6406 |
This paper describes class-A voltage followers Basic Source Follower using MOS and DTMOS Transistor.The circuits are simulated in 90nm technology. The results are used to compare the performance of the different voltagefollowers. All analysis are supported by the simulation results. Class-A voltage followers are designed in 90nmtechnology. The analysis are made in terms of transient response and frequency response using ELDO spice and mentorgraphics. The propagation delay in MOS Transistor is more than DTMOS Transistor. So,the speed of the DTMOS ismore than MOS Transistor. It is found that the Power Dissipation is reduced and Frequency can be improved.
Nishtha K. Patel, Nilesh D. Patel, “High Speed Voltage Follower using DTMOS Transistor”, International Journal of Advance Engineering and Research Development (IJAERD), Vol. 2, Issue 4, pp. 620-625, April 2015.
