REVIEW ON ELECTRICAL RESISTIVITY OF OXIDE MATERIALS USING FUZZY LOGIC
| Author(s) | : | Dr. Anup Mishra, Dr. (Mrs.) Poonam Sinha |
| Institution | : | Ph.D. Scholar, Bit, Durg (C.G.) |
| Published In | : | Vol. 2, Issue 2 — February 2015 |
| Page No. | : | 48-55 |
| Domain | : | Engineering |
| Type | : | Research Paper |
| ISSN (Online) | : | 2348-4470 |
| ISSN (Print) | : | 2348-6406 |
The electrical resistivity of pure, or nearly pure, metallic elements are presented here as a function of temperaturefor the range from 1 to 300°K. These metallic elements include only those that exhibit an increase in resistivity withincreasing temperature. Propose implementing fuzzy logic using memristors. Min and max operations are done byantipodally configured memristor circuits that may be assembled into computational circuits. The historical background oftransparent conducting oxides and then make some general remarks about their typical properties.[1] This is followed by ashort discussion of the desired properties for future applications (particularly photovoltaic devices). These are ambitiousobjectives but they provide targets for future basic research and development.[3] Although it may be possible to obtain theseproperties in the laboratory, it is vital to ensure that account is taken of industrial perceptions to the development of the nextgeneration of materials.
Dr. Anup Mishra, Dr. (Mrs.) Poonam Sinha, “REVIEW ON ELECTRICAL RESISTIVITY OF OXIDE MATERIALS USING FUZZY LOGIC”, International Journal of Advance Engineering and Research Development (IJAERD), Vol. 2, Issue 2, pp. 48-55, February 2015.
