Paper Details

—Emerging solid state memory devices based on different materials and volatility has beenwidely acknowledged like NVRAMs (or Memristor).Evolution of new solid state ionic conductorsand in particular (Memristor) brought impetus to the creation of new domain of larger storagecapabilities for the future electronic systems. The achievements of these emerging technologies arekind of encouraging when compared with the existing memory types. Accordingly, a new memoryarchitecture called Resistive Random Access Memory (ReRAM) memory faces challenges likesneak path current flowing through neighbouring cells which limits array size. To deal with suchissue is to enforce a crossbar array using complementary resistive switch (CRS). CRS has recentlybeen proclaimed as a great beneficiary to conventional charge based memories. But, the nanoscaleadvantage of these devices poses new challenges in designing such memories as well. In this paper,our purpose is to familiarize Memristor principle and a preliminary note on various understanding ofMemristor is also described and a novel non-linear memristive based complementary resistive switchmemory model for effective simulation and analysis. The CRS has two memristor connected in antiserially. Four different state of CRS which significantly reduces sneak path current as compared tomemristor based architecture. Here, CRSs can be viewed as primary logic building block in arrayand two modes of resistance states of CRS stores the information. Thus, our aim is to elucidate as tohow CRS is beneficial for reducing sneak path current

Sneha Mohan Patil, S. R.S. Prabhaharan, “Nano crossbar array of Complementary Resistive Switches with nonlinear memristive characteristics”, International Journal of Advance Engineering and Research Development (IJAERD), Vol. 1, Issue 6, pp. 439-445, June 2014.