CHARACTERIZATION, PREPARATION& ANALYSIS OF OXIDE BASED CAPACITORS FOR GATE OF MOS CHARACTERISTICS
Keywords:
Impedance Spectroscopy, Scanning electron microscopic, Thermo gravimetric Analysis Cyclic VoltammetryAbstract
Over the past three decades, CMOS technology scaling has been a primary driver of the electronics industry and
has provided a path towards both denser and faster integration. The transistors manufactured today are 20 times faster and
occupy less than 1% of the area of those built 20 years ago. The number of devices per chip and the system performance has
been improving exponentially over the last two decades according to Moore’s law. As the channel length is reduced, the
performance improves, the power per switching event decreases, and the density improves. But the power density, total
circuits per chip, and the total chip power consumption has been increasing. The need for more performance and integration
has accelerated the scaling trends in almost every device parameter, such as lithography, effective channel length, gate
dielectric thickness, supply voltage, device leakage, etc
