Hybrid PVA-In2O3 Nano Thin Film for Transparent Optical Devices
| Author(s) | : | Sathish Sugumaran, Dinesh Muthu, Chandar Shekar Bellan, Dinesh Bheeman, Sharmila Chandran |
| Institution | : | Present address: Institute for Solid State Physics (ISSP), Division of Nanoscale Science, University of Tokyo, 5-1-5 Kashiwanoha, Chiba Japan 277-8581. |
| Published In | : | Vol. 4, Issue 17 — January 2017 |
| Page No. | : | - |
| Domain | : | Engineering |
| Type | : | Research Paper |
| ISSN (Online) | : | 2348-4470 |
| ISSN (Print) | : | 2348-6406 |
Hybrid PVA-In2O3 transparent nano thin film (293 nm) was prepared by very simple and cost effective dipcoating method. The effect of annealing temperature on the functional group, structure, morphology and optical propertieswas investigated. The presence of metal-oxide (In-O) bond was confirmed from Fourier transform infrared spectroscopy. Xray diffraction patterns revealed the predominantly amorphous in nature of the films. Scanning electron microscopy imagesrevealed spherical shaped uniform grains distributed over the entire film surface. The sizes of the grains increased withincrease of annealing temperature. The percentage of transmittance (80 to 90%) increases whereas band gap energy (3.80 to3.76 eV) values decreases with increase of annealing temperature. The obtained results indicated that the amorphous natureand high transmittance with wide band gap of the prepared transparent hybrid nano thin films indicated the feasibility ofutilizing these nano thin films in transparent optical device applications.
Sathish Sugumaran, Dinesh Muthu, Chandar Shekar Bellan, Dinesh Bheeman, Sharmila Chandran, “Hybrid PVA-In2O3 Nano Thin Film for Transparent Optical Devices”, International Journal of Advance Engineering and Research Development (IJAERD), Vol. 4, Issue 17, pp. -, January 2017.
