Preparation and Characterization of ZnO Thin Films By SILAR Method
| Author(s) | : | M.Nirmala, B.Kavitha, G.Nanadhini, C.prema |
| Institution | : | Department of Physics, Sri GVG Visalakshi College for Women, S.V Mills post, Udumalpet-642128, Tamilnadu, India. |
| Published In | : | Vol. 4, Issue 17 — January 2017 |
| Page No. | : | - |
| Domain | : | Engineering |
| Type | : | Research Paper |
| ISSN (Online) | : | 2348-4470 |
| ISSN (Print) | : | 2348-6406 |
Zinc oxide (ZnO) thin films were prepared by the Successive Ionic Layer Adsorption and Reaction (SILAR)method. The structural, surface morphological and optical properties of the prepared films have been studied by usingX-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-VIS-spectrophotometer. The X ray diffractionanalysis shows that the films are polycrystalline with zincite hexagonal structure. The study of surface morphology revealsthat morphology of the prepared film has a good crystalline quality and the film surface has a generally rough and densemorphology. The prepared ZnO films exhibit a moderately high transmittance in visible band, and optical band gap of 3.56eV which can be applicable for photovoltaic applications.
M.Nirmala, B.Kavitha, G.Nanadhini, C.prema, “Preparation and Characterization of ZnO Thin Films By SILAR Method”, International Journal of Advance Engineering and Research Development (IJAERD), Vol. 4, Issue 17, pp. -, January 2017.
