Influence of Etching time on Refractive index of Nanocrystalline Porous Silicon
| Author(s) | : | K. Kulathuraan |
| Institution | : | Asst. Prof., Department of Physics, A.P.A College of Arts and Culture, Palani – 624 601.,Tamilnadu, India. |
| Published In | : | Vol. 4, Issue 17 — January 2017 |
| Page No. | : | - |
| Domain | : | Engineering |
| Type | : | Research Paper |
| ISSN (Online) | : | 2348-4470 |
| ISSN (Print) | : | 2348-6406 |
Porous Silicon (PS) layers produced by electrochemical anodization method of p-type silicon wafer atdifferent etching times. The structural, morphological and optical properties of PS were studied by XRD, SEM and PLanalysis. The porosity of the PS layers was determined using the parameters obtained from SEM images by thegeometrical method. The refractive index values of the PS layers as a function of porosity were determined by EffectiveMedium Approximation Methods (EMA). The influence of etching time on porosity and the refractive index of PS, werediscussed. SEM images indicate that the pores are surrounded by a thick columnar network of silicon walls. This poroussilicon layer can be considered as a sponge like structure. The crystallite sizes of PS nanocrystallites were determined byXRD studies.PL study reveals that there is a prominent emission peak at 776.5 nm. No spectral shift was observed. Theseresults suggest that this nanocrystalline porous silicon could be a potential candidate for optical as well asoptoelectronic device applications.
K. Kulathuraan, “Influence of Etching time on Refractive index of Nanocrystalline Porous Silicon”, International Journal of Advance Engineering and Research Development (IJAERD), Vol. 4, Issue 17, pp. -, January 2017.
