Paper Details

Over the past three decades, CMOS technology scaling has been a primary driver of the electronics industry andhas provided a path towards both denser and faster integration. The transistors manufactured today are 20 times faster andoccupy less than 1% of the area of those built 20 years ago. The number of devices per chip and the system performance hasbeen improving exponentially over the last two decades according to Moore’s law. As the channel length is reduced, theperformance improves, the power per switching event decreases, and the density improves. But the power density, totalcircuits per chip, and the total chip power consumption has been increasing. The need for more performance and integrationhas accelerated the scaling trends in almost every device parameter, such as lithography, effective channel length, gatedielectric thickness, supply voltage, device leakage, etc

Abhishek Verma 1, Dr.Anup Mishra, “CHARACTERIZATION, PREPARATION& ANALYSIS OF OXIDE BASED CAPACITORS FOR GATE OF MOS CHARACTERISTICS”, International Journal of Advance Engineering and Research Development (IJAERD), Vol. 2, Issue 1, pp. 49-58, January 2015.